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November 16
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14 January 1989

Keine ausführliche Beschreibung für "November 16" verfügbar.
Price: $126.99
$133.99
Pages: 392
Publisher: De Gruyter
Imprint: De Gruyter
Publication Date:
14 January 1989
ISBN: 9783112472873
Format: Hardcover
Frontmatter -- Contents -- Review Article -- A Many-Beam Diffraction Effect in the CoK?1 Spectral Lineshape -- Effets tridimensionnels observés dans des images électroniques de l'oxyde de néodyme hexagonal -- Crystal Structure and Superconductivity of the Tl 2+X Ba2Ca 2-x Cu3O10 Compound -- Oscillations of Specular Beam Intensity in Reflection Diffraction from the Surface of a Growing Epitaxial Film. A Theoretical Study -- The Order-Disorder Transition of the Intermetallic Phase Ni3Al -- The Influence of Impurities on the Dislocation Splitting in Semiconductors -- Defect Structure and Physico-Mechanical Properties of SmS Single Crystals -- Physical Properties of AnBVI Semiconductor Crystals after Plastic Deformation at Low Temperature -- The Ferromagnetic Diffusion Anomaly of the Diffusion System Iron-Antimony -- Non-Isothermal Studies of the Eutectoidal Decomposition of the Alloy Al-59 at% Zn -- Intermediate Crystallization of Amorphous Layers of Silicon at Pulsed Laser Annealing -- Classification of Martensitic-Like Transformations in CrxMn 1-x AS 1-y Py Crystals -- Modification of Electrochromic W03 Films by Pulsed Ultraviolet Laser Irradiation -- The DC Conductivity of Carbon Films -- IR and RBS Spectroscopy Investigation of Semi-Insulating Phosphorus-Doped Polycrystalline Silicon Layers -- On Twin and Stacking Fault Formation during the Epitaxial Film Growth of F.C.C. Materials on (111) Substrates -- Excess Carrier Recombination in Indirect-Crap GaA S1-x Px: N -- The Estimation of the Contact Potential Difference from Contact Charging between Polymer and Metal -- Recombination-Enhanced Transformation of Deep Centers in Red Light-Emitting AlGaAs Diodes -- Recombination-Enhanced Transformation of Deep Centers in Red Light-Emitting AlGaAs Diodes -- The Valence Band Tail State Filling in Heavily Doped and Compensated Crystals of Gallium Arsenide -- Average Magnetization of Compositionally Modulated Cu/Ni Films -- The Structural Phase Transition in Cobalt Monocrystals Investigated by Means of SEM -- Magnetic and Crystallographic Properties of R2Fe 14-x;CrxB Compounds (R = Y, Nd, and Gd) -- Static Magnetization Irreversibilities in Soft Ferromagnetic Media of High Crystalline Perfection -- Light Diffraction by Stripe Domain Structures in Magnetic Crystals -- Luminescence Studies of CaS Phosphors Doped with Cerium and Copper -- Photoconductivity, Cathodoluminescence, and Optical Absorption of CdIn2S2Se2 Single Crystals -- Determination of the Absorption Coefficient and the Internal Luminescence Spectrum of GaAs and GaS 1-x Px (x = 0.375, 0.78) from Beam Voltage Dependent Measurements of Cathodoluminescence Spectra in the Scanning Electron Microscope -- Flat Band Potential of As-Grown n-MoSe2 Single Crystal Electrodes -- Process of Defect Formation in the Collector Region of an Electron-Irradiated npn Si Transistor -- Figures -- Cross Section Transmission Electron Microscopy Studies of Zr Samples Laser Irradiated in Air -- Powder Data on TlInSe2, TlInTe2 and TlGaTe2 -- Short-Range Clustering in the Al-3mass%Mg Alloy -- The Role of Grain Size on the Work-Hardening Characteristics of Cu-Al Solid Solutions -- Quasiregular Model and Phase Equilibrium Diagram of a Binary System -- Imaging of the SOI Interface by High Resolution Electron Microscopy -- Fractalic Growth in Metal-Cluster Polymer Composite Films -- Effects of Growth and Annealing Conditions on Deep Level Emissions in CVD Poly-ZnSe Layers -- DC Conduction in Thin Films of SiO/In2P3 before and after Electroforming -- Thermal Properties of Co 1-x CuxCr2S4 in the Magnetic X - X X ¿t ^ Phase Transition Region -- Photoinduced Magnetization Effect on IR Spectra of Ferrites -- Pre-Printed Titles -- Substance Classification -- Manuscripts and letters for physica status solidi (b) — basic research and physica status solidi (a) — applied research -- Editorial Information