We're sorry. An error has occurred
Please cancel or retry.
September 16
Regular price
$235.99
Regular price
$250.00
Sale price
$235.99
Unit price
/
per
Sold out
Re-stocking soon
Keine ausführliche Beschreibung für "September 16" verfügbar.
Some error occured while loading the Quick View. Please close the Quick View and try reloading the page.
Couldn't load pickup availability
Ships within 2 business days
-
14 January 1990

Keine ausführliche Beschreibung für "September 16" verfügbar.
Price: $235.99
$250.00
Pages: 740
Publisher: De Gruyter
Imprint: De Gruyter
Publication Date:
14 January 1990
ISBN: 9783112479636
Format: Hardcover
BISACs:
SCI055000 SCIENCE / Physics / General
Frontmatter -- Author Index -- Contents -- Reyiew Article -- Photoelectric Anisotropy of II IV-V2 Ternary Semiconductors -- Original Papers -- The Many Beam Dynamical Theory of Contrast in Electron Microscope Images of Microtwins for the Non-Symmetrical Laue and Non-Column Cases -- Optimisation of the Fourier Components of Potential in Bloch Wave TEM Image Contrast Calculations -- RF Plasma Modification of Heavily Destroyed Ion Implanted Subsurface Silicon Layers -- Electrical Properties of Superionic Silver-Bora te Glasses Doped with Agl -- Substitutional Defects in Sb2Te3 Crystals -- Simulated Quenching of Silicon WSR Monochromators Using WSR Section Topography -- Structural Phase Transition in the Perovskite-Type Layer Compound (C3H7NH3),PbCl4 -- Mechanical Model of the Bamboo Boundary Internal Friction Peak -- Steady-State Creep and Strain Transients for Stress Change Tests in an Al-0.5 w t% Zn Solid Solution Alloy -- Stoichiometric Annealing and Electrical Properties of Hgo.3Cdo.2Te Grown by Solid State Recrystallization -- Application of Thermal Conductivity Measurement by the Relaxation Method to Crystallization Kinetics of Glassy As2Se3 + 1 mol% In -- Structural Phase Transitions of Layer Compounds KFeF4, KTiF4, and KVF4 -- (CuIn)x(AgIn)!(Mn2ZTe2 Alloys: T(z) Phase Diagram and Optical Energy Gap Values -- X-Ray Diffraction and Conductivity Investigations of Lanthanum-Doped Barium Titanate Ceramics -- Determination of the Band Discontinuities of GaSb(n)-Ga0 83Al0.17Sb(p) Heterojunction by Capacitance-Voltage Measurements -- Influence of Annealing Regimes on Phase Transitions in Nitrogen and Carbon Ion Implanted Molybdenum -- Dependence of the Temperature Coefficient of the Strain Coefficients of Resistance of Double-Layer Thin Metallic Films on Thermal Strains -- Characterization of Dielectric Films and Damage Threshold at 1.064 ¡xm -- Investigation of the Structure and Properties of KCl-NaCl Crystals at Elevated Temperatures -- Changes in Structure and Properties of NltaOs Anodic Films Caused by Generating Anion Defects on Their Surface -- Reliability of Tantalum Oxide Film Capacitors -- A Study of UV/Ozone Cleaning Procedure for Silicon Surfaces -- Preparation and Faraday Rotation Spectra of YIG:Pb, Pt Garnet Films -- Structural and Electronic Properties of Evaporated Thin Films of Cadmium Telluride -- ESR Investigation of the Oxygen Vacancy in Pure and Bi203-Doped ZnO Ceramics -- Determination of the Germanium Acceptor Ionisation Energy of ALGai-^As (0 ^ * ^ 0.40) by Hall Effect and Luminescence -- Peculiarities of Galvanomagnetic and Thermoelectric Properties of YBaa-JLaxCuaO?-,» Solid Solutions -- Multi-Gap Model for Tunneling in High-Tc Superconductors -- Columnar Structure and Texture [001] in Co-Ni-W Films -- Bit Analysis of Magnetic Recording Media by Force Microscopy -- Deep Trapping of Injected Carriers in Ferroelectric Polymer -- Dielectric Properties of TbAs04 Single Crystals -- Dielectric Relaxation in Glassy Se and Sei«0_«Te* Alloys2) -- Optical Properties of Uranium in Potassium Alumino-Phosphate Glasses -- Defect Annealing in Pure Cdr2 Crystals -- Mécanismes de thermoluminescence dans des fluorines CaF2 naturelles et de synthèse -- Short Notes